Toshiba Electronics (UK) Ltd 50V 0.1A Bipolar Transistor RN1412TE85LF

Description
TRANS PREBIAS NPN 50V 0.1A SMINI Product overview: RN1412TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1412TE85LF can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1412TE85LF - 120039-RN1412TE85LF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1412TE85LF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
TRANS PREBIAS NPN 50V 0.1A SMINI Product overview: RN1412TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1412TE85LF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
50V 0.1A Bipolar Transistor
292-RN1412TE85LF
50V 0.1A Bipolar Transistor 292-RN1412TE85LF
TRANS PREBIAS NPN 50V 0.1A SMINI Product overview: RN1412TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1412TE85LF can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V 0.1A SMINI Product overview: RN1412TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1412TE85LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1412TE85LF - 120039-RN1412TE85LF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1412TE85LF
120039-RN1412TE85LF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1412TE85LF 120039-RN1412TE85LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 120039-RN1412TE85LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 120039-RN1412TE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
RN1412TE85LF
Bipolar Transistors - Pre-Biased RN1412TE85LF
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1412TE85LF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN1412TE85LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN1412TE85LF
TRANS PREBIAS NPN 50V 0.1A SMINI

TRANS PREBIAS NPN 50V 0.1A SMINI

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-RN1412TE85LF 120039-RN1412TE85LF RN1412TE85LF RN1412TE85LF
Product Name 50V 0.1A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1412TE85LF Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
Package Type Tape & Reel (TR) SOT3; S-Mini
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data