Toshiba Electronics (UK) Ltd Single, Pre-Biased Bipolar Transistors RN1403,LF

TRANS PREBIAS NPN 50V 0.1A SMINI

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini

TRANS PREBIAS NPN 50V 0.1A SMINI

TRANS PREBIAS NPN 50V 0.1A SMINI Product overview: RN1403,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1403,LF can be used for catalog matching and distributor lookup.

Win Source Part Number: 1336817-RN1403,LF
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Package: Tape & Reel
Standard Package: 3,000
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Transistor Type: NPN - Pre-Biased
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
ECCN: EAR99
Fake Threat In the Open Market: 34 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Base Product Number: RN1403
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA