Toshiba America Electronic Components, Inc. 0.2W Bipolar Transistor RN1402

Description
TRANS PREBIAS NPN 0.2W S-MINI Product overview: RN1402 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1402 can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS NPN 0.2W S-MINI Product overview: RN1402 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1402 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
0.2W Bipolar Transistor
293-RN1402
0.2W Bipolar Transistor 293-RN1402
TRANS PREBIAS NPN 0.2W S-MINI Product overview: RN1402 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1402 can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 0.2W S-MINI Product overview: RN1402 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1402 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1402 - 095755-RN1402 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1402
095755-RN1402
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1402 095755-RN1402
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 095755-RN1402 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): BCR133E6327; DDTC114ECA-7; RN1402; DDTC114ECA-7-F; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 095755-RN1402
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 50 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): BCR133E6327; DDTC114ECA-7; RN1402; DDTC114ECA-7-F;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-RN1402 095755-RN1402
Product Name 0.2W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1402
Polarity NPN NPN; NPN - Pre-Biased
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