Toshiba America Electronic Components, Inc. 50V 100mA Bipolar Transistor RN1401T5LFT

Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R Product overview: RN1401T5LFT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-RN1401T5LFT can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1088707-RN1401T5LFT
Packaging: Tape and Reel
Mounting: SMD (SMT)
Polarity: NPN
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: TO-236-3
Alternative Parts (Cross-Reference): RN1401T5LFTRN1401(T5L,F,T);
Popularity: Low
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 200 mW
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 50 V
Max Collector Current: 100 mA
Transition Frequency: 250 MHz