Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - RN1130MFV(TL3,T) RN1130MFV(TL3,T)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 974586-RN1130MFV(TL3,T)
Packaging: Cut Tape (CT)
Mounting: SMD (SMT)
Categories: RF Transistors(BJT)
Case / Package: SOT-723
Popularity: Low
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Shortage
Mount: Surface Mount
RoHS: Compliant
Max Power Dissipation: 150 mW
Max Breakdown Voltage: 50 V
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 300 mV
Max Collector Current: 100 mA
Transition Frequency: 250 MHz

X34 Pb-f Vesm Transistor Pd 150MW F 1MHZ (lf) Product overview: RN1130MFV(TL3,T) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW, 1MHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, 1MHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-RN1130MFV(TL3,T) can be used for catalog matching and distributor lookup.