Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1117MFV RN1117MFV

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 062558-RN1117MFV
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: VESM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Digital Transistors Product overview: RN1117MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2045-RN1117MFV can be used for catalog matching and distributor lookup.

Bipolar Transistors - Pre-Biased