Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1112CT(TPL3) RN1112CT(TPL3)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 098372-RN1112CT(TPL3)
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: CST3
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 150mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 1mA, 5V
Maximum Power Dissipation: 50mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

TRANS PREBIAS NPN 0.05W CST3 Product overview: RN1112CT(TPL3) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1112CT(TPL3) can be used for catalog matching and distributor lookup.