Toshiba Electronics (UK) Ltd 0.05W Bipolar Transistor RN1109CT(TPL3)

Description
TRANS PREBIAS NPN 0.05W CST3 Product overview: RN1109CT(TPL3) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1109CT(TPL3) can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS NPN 0.05W CST3 Product overview: RN1109CT(TPL3) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1109CT(TPL3) can be used for catalog matching and distributor lookup.
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Suppliers

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Product
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Singapore
0.05W Bipolar Transistor
293-RN1109CT(TPL3)
0.05W Bipolar Transistor 293-RN1109CT(TPL3)
TRANS PREBIAS NPN 0.05W CST3 Product overview: RN1109CT(TPL3) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1109CT(TPL3) can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 0.05W CST3 Product overview: RN1109CT(TPL3) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1109CT(TPL3) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1109CT(TPL3) - 098370-RN1109CT(TPL3) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1109CT(TPL3)
098370-RN1109CT(TPL3)
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1109CT(TPL3) 098370-RN1109CT(TPL3)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098370-RN1109CT(TPL3 ) Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: CST3 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 150mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 50mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Quantity per package: 10k pcs

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 098370-RN1109CT(TPL3)
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: CST3
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 150mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 50mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Quantity per package: 10k pcs

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-RN1109CT(TPL3) 098370-RN1109CT(TPL3)
Product Name 0.05W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1109CT(TPL3)
Polarity NPN NPN; NPN - Pre-Biased
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