Toshiba Corporation Bipolar Transistors - Pre-Biased RN1108MFV(TPL3)

RN1108MFV is a silicon NPN epitaxial transistor with integrated bias resistors for switching and driver applications. It uses an ultra-small VESM package, weighing 1.5 mg, suitable for high-density mounting. The device has a collector-emitter voltage rating of 50 V, a collector current limit of 100 mA, and a power dissipation of 150 mW on an FR4 board. Its DC current gain is at least 80 at IC = 10 mA and VCE = 5 V. Input resistor values are 22 kΩ (R1) and 47 kΩ (R2). The collector-emitter saturation voltage is 0.3 V max at IC = 5 mA and IB = 0.5 mA. Input turn-on voltage ranges from 1.0 to 2.6 V. Junction temperature operates up to 150 °C, and storage temperature ranges from -55 to 150 °C.