Toshiba Electronics (UK) Ltd 50V 0.1A Bipolar Transistor RN1104T5LFT

TRANS PREBIAS NPN 50V 0.1A SSM Product overview: RN1104T5LFT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1104T5LFT can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Win Source Part Number: 1115132-RN1104T5LFT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250 MHz
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Alternative Parts (Cross-Reference): RN1104(T5LFT);
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Other Names: RN1104T5LFTCT,RN1104T5LFTDKR,RN1104(T5L,F,T),RN1104T5LFTTR,RN1104T5LFT-ND
Base Product Number: RN1104