Toshiba Corporation 50V 100mA 150mW Bipolar Transistor RN1104FV

Description
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM Product overview: RN1104FV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 150mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 150mW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1104FV can be used for catalog matching and distributor lookup.
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Description
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM Product overview: RN1104FV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 150mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 150mW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1104FV can be used for catalog matching and distributor lookup.
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Singapore
50V 100mA 150mW Bipolar Transistor
293-RN1104FV
50V 100mA 150mW Bipolar Transistor 293-RN1104FV
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM Product overview: RN1104FV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 150mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 150mW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1104FV can be used for catalog matching and distributor lookup.

Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM Product overview: RN1104FV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 150mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 150mW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1104FV can be used for catalog matching and distributor lookup.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 293-RN1104FV
Product Name 50V 100mA 150mW Bipolar Transistor
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