Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV RN1101MFV

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 062552-RN1101MFV
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: VESM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

TRANS PREBIAS NPN 50V SOT723 Product overview: RN1101MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1101MFV can be used for catalog matching and distributor lookup.