Toshiba Electronics (UK) Ltd Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased RN1101,LF(CT

Description
Win Source Part Number: 1151221-RN1101,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-75, SOT-416 Supplier Device Package: SSM ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Toshiba Semiconductor and Storage Other Names: RN1101,LF(CTTR,RN110 1,LF(CTDKR,RN1101,LF (CB,RN1101(T5LFT)TR- ND,RN1101(T5LFT)TR,R N1101(T5LFT)CT-ND,RN 1101T5LFT,RN1101(T5L ,F,T),RN1101(T5LFT)C T,RN1101(T5LFT)DKR-N D,RN1101(T5LFT)DKR,R N1101,LF(CTCT Base Product Number: RN1101
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Description
Win Source Part Number: 1151221-RN1101,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-75, SOT-416 Supplier Device Package: SSM ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Toshiba Semiconductor and Storage Other Names: RN1101,LF(CTTR,RN110 1,LF(CTDKR,RN1101,LF (CB,RN1101(T5LFT)TR- ND,RN1101(T5LFT)TR,R N1101(T5LFT)CT-ND,RN 1101T5LFT,RN1101(T5L ,F,T),RN1101(T5LFT)C T,RN1101(T5LFT)DKR-N D,RN1101(T5LFT)DKR,R N1101,LF(CTCT Base Product Number: RN1101
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1151221-RN1101,LF(CT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1151221-RN1101,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1151221-RN1101,LF(CT
Win Source Part Number: 1151221-RN1101,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-75, SOT-416 Supplier Device Package: SSM ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Toshiba Semiconductor and Storage Other Names: RN1101,LF(CTTR,RN110 1,LF(CTDKR,RN1101,LF (CB,RN1101(T5LFT)TR- ND,RN1101(T5LFT)TR,R N1101(T5LFT)CT-ND,RN 1101T5LFT,RN1101(T5L ,F,T),RN1101(T5LFT)C T,RN1101(T5LFT)DKR-N D,RN1101(T5LFT)DKR,R N1101,LF(CTCT Base Product Number: RN1101

Win Source Part Number: 1151221-RN1101,LF(CT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250 MHz
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Other Names: RN1101,LF(CTTR,RN1101,LF(CTDKR,RN1101,LF(CB,RN1101(T5LFT)TR-ND,RN1101(T5LFT)TR,RN1101(T5LFT)CT-ND,RN1101T5LFT,RN1101(T5L,F,T),RN1101(T5LFT)CT,RN1101(T5LFT)DKR-ND,RN1101(T5LFT)DKR,RN1101,LF(CTCT
Base Product Number: RN1101

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - RN1101LF(CTDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
RN1101LF(CTDKR-ND
Single, Pre-Biased Bipolar Transistors RN1101LF(CTDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - RN1101LF(CTTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
RN1101LF(CTTR-ND
Single, Pre-Biased Bipolar Transistors RN1101LF(CTTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - RN1101LF(CTCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
RN1101LF(CTCT-ND
Single, Pre-Biased Bipolar Transistors RN1101LF(CTCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

Buy Now Datasheet
Singapore, Singapore
50V 0.1A Bipolar Transistor
292-RN1101,LF(CT
50V 0.1A Bipolar Transistor 292-RN1101,LF(CT
TRANS PREBIAS NPN 50V 0.1A SSM Product overview: RN1101,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101,LF(CT can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V 0.1A SSM Product overview: RN1101,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101,LF(CT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1101,LF(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN1101,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN1101,LF(CT
TRANS PREBIAS NPN 50V 0.1A SSM

TRANS PREBIAS NPN 50V 0.1A SSM

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1151221-RN1101,LF(CT RN1101LF(CTDKR-ND 292-RN1101,LF(CT RN1101,LF(CT
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Single, Pre-Biased Bipolar Transistors 50V 0.1A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 SC-75, SOT-416 Tape & Reel (TR)
IC(max) 100 milliamps 100000 milliamps 100 milliamps
Power Gain 30 dB
Operating Frequency 250 MHz
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