Toshiba America Electronic Components, Inc. 5V 1GHZ Bipolar Transistor MT3S16U

Description
TRANS RF NPN 5V 1GHZ USM Product overview: MT3S16U from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S16U can be used for catalog matching and distributor lookup.
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Description
TRANS RF NPN 5V 1GHZ USM Product overview: MT3S16U from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S16U can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
5V 1GHZ Bipolar Transistor
283-MT3S16U
5V 1GHZ Bipolar Transistor 283-MT3S16U
TRANS RF NPN 5V 1GHZ USM Product overview: MT3S16U from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S16U can be used for catalog matching and distributor lookup.

TRANS RF NPN 5V 1GHZ USM Product overview: MT3S16U from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S16U can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - MT3S16U - 329307-MT3S16U - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MT3S16U
329307-MT3S16U
TRANSISTORS - RF Transistors (BJT) - MT3S16U 329307-MT3S16U
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 329307-MT3S16U Packaging: Reel - TR Mounting: SMD (SMT) Gain: 4.5dBi Frequency - Transition: 4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: USM Maximum Current Collector: 60mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 80 @ 5mA, 1V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 329307-MT3S16U
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 4.5dBi
Frequency - Transition: 4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: USM
Maximum Current Collector: 60mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 80 @ 5mA, 1V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 283-MT3S16U 329307-MT3S16U
Product Name 5V 1GHZ Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - MT3S16U
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; USM
Packing Method Reel - TR
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