Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - MT3S16U MT3S16U

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 329307-MT3S16U
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 4.5dBi
Frequency - Transition: 4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: USM
Maximum Current Collector: 60mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 80 @ 5mA, 1V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

TRANS RF NPN 5V 1GHZ USM Product overview: MT3S16U from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S16U can be used for catalog matching and distributor lookup.