Toshiba Electronics (UK) Ltd Bipolar RF Transistors MT3S113TU,LF

Description
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM
Request a Quote Datasheet
Description
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar RF Transistors - MT3S113TULFCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFCT-ND
Bipolar RF Transistors MT3S113TULFCT-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
Bipolar RF Transistors - MT3S113TULFTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFTR-ND
Bipolar RF Transistors MT3S113TULFTR-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
Bipolar RF Transistors - MT3S113TULFDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFDKR-ND
Bipolar RF Transistors MT3S113TULFDKR-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF - 809194-MT3S113TU,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF
809194-MT3S113TU,LF
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF 809194-MT3S113TU,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 809194-MT3S113TU,LF Packaging: Reel Mounting Style: SMD Power - Max: 900mW Gain: 12.5dB Transistor Type: NPN Frequency - Transition: 11.2GHz Supplier Device Package: UFM Temperature Range - Operating: 150°C Manufacturer Package: 3-SMD, Flat Lead Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 5.3V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Noise Figure (dB Typ at f): 1.45dB at 1GHz DC Current Gain (hFE) (Min) at Ic, Vce: 200 at 30mA, 5V

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 809194-MT3S113TU,LF
Packaging: Reel
Mounting Style: SMD
Power - Max: 900mW
Gain: 12.5dB
Transistor Type: NPN
Frequency - Transition: 11.2GHz
Supplier Device Package: UFM
Temperature Range - Operating: 150°C
Manufacturer Package: 3-SMD, Flat Lead
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 5.3V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Noise Figure (dB Typ at f): 1.45dB at 1GHz
DC Current Gain (hFE) (Min) at Ic, Vce: 200 at 30mA, 5V

Buy Now
Singapore, Singapore
5.3V 11.2GHZ Bipolar Transistor
283-MT3S113TU,LF
5.3V 11.2GHZ Bipolar Transistor 283-MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.

RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - MT3S113TU,LF - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MT3S113TU,LF
Bipolar RF Transistors MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM

RF TRANS NPN 5.3V 11.2GHZ UFM

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MT3S113TU,LF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MT3S113TU,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM

RF TRANS NPN 5.3V 11.2GHZ UFM

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MT3S113TULFCT-ND 809194-MT3S113TU,LF 283-MT3S113TU,LF MT3S113TU,LF MT3S113TU,LF
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF 5.3V 11.2GHZ Bipolar Transistor Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN; NPN
Package Type 3-SMD, Flat Leads SOT3 Tape & Reel (TR) 3-SMD, Flat Lead
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
VCEO 5.3 volts 5.3 volts 5.3 volts
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