Toshiba Electronics (UK) Ltd 5.3V 11.2GHZ Bipolar Transistor MT3S113TU,LF

Description
RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.
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Description
RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
5.3V 11.2GHZ Bipolar Transistor
283-MT3S113TU,LF
5.3V 11.2GHZ Bipolar Transistor 283-MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.

RF TRANS NPN 5.3V 11.2GHZ UFM Product overview: MT3S113TU,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3V, 11.2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3V, 11.2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S113TU,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF - 809194-MT3S113TU,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF
809194-MT3S113TU,LF
TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF 809194-MT3S113TU,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 809194-MT3S113TU,LF Packaging: Reel Mounting Style: SMD Power - Max: 900mW Gain: 12.5dB Transistor Type: NPN Frequency - Transition: 11.2GHz Supplier Device Package: UFM Temperature Range - Operating: 150°C Manufacturer Package: 3-SMD, Flat Lead Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 5.3V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Noise Figure (dB Typ at f): 1.45dB at 1GHz DC Current Gain (hFE) (Min) at Ic, Vce: 200 at 30mA, 5V

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 809194-MT3S113TU,LF
Packaging: Reel
Mounting Style: SMD
Power - Max: 900mW
Gain: 12.5dB
Transistor Type: NPN
Frequency - Transition: 11.2GHz
Supplier Device Package: UFM
Temperature Range - Operating: 150°C
Manufacturer Package: 3-SMD, Flat Lead
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 5.3V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Noise Figure (dB Typ at f): 1.45dB at 1GHz
DC Current Gain (hFE) (Min) at Ic, Vce: 200 at 30mA, 5V

Buy Now
Bipolar RF Transistors - MT3S113TULFCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFCT-ND
Bipolar RF Transistors MT3S113TULFCT-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
Bipolar RF Transistors - MT3S113TULFTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFTR-ND
Bipolar RF Transistors MT3S113TULFTR-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
Bipolar RF Transistors - MT3S113TULFDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
MT3S113TULFDKR-ND
Bipolar RF Transistors MT3S113TULFDKR-ND
RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MT3S113TU,LF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MT3S113TU,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM

RF TRANS NPN 5.3V 11.2GHZ UFM

Supplier's Site
Bipolar RF Transistors - MT3S113TU,LF - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MT3S113TU,LF
Bipolar RF Transistors MT3S113TU,LF
RF TRANS NPN 5.3V 11.2GHZ UFM

RF TRANS NPN 5.3V 11.2GHZ UFM

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 283-MT3S113TU,LF 809194-MT3S113TU,LF MT3S113TULFCT-ND MT3S113TU,LF MT3S113TU,LF
Product Name 5.3V 11.2GHZ Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - MT3S113TU,LF Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Polarity NPN NPN NPN NPN; NPN
Package Type Tape & Reel (TR) SOT3 3-SMD, Flat Leads 3-SMD, Flat Lead
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
VCEO 5.3 volts 5.3 volts 5.3 volts
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