Trans RF BJT NPN 6V 0.1A 300mW 4-Pin(3+Tab) PW-Mini / VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Product overview: MT3S111P from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V, 0.1A, 300mW. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, 0.1A, 300mW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MT3S111P can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 244830-MT3S111P
Family Name: MT3S111P
Alternative Parts (Cross-Reference): 2SC5631-E; 2SC5631JR; 2SC5631; 2SC5631JR-E ;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 283-MT3S111P | 244830-MT3S111P |
| Product Name | 6V 0.1A 300mW Bipolar Transistor | TRANSISTORS - RF Transistors (BJT) - MT3S111P |
| Package Type | SOT3 |
