Toshiba America Electronic Components, Inc. 500V 4A MOSFET Transistor K4A50D

Description
MOSFET N-CH 500V 4A TO-220SIS Product overview: K4A50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-K4A50D can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 500V 4A TO-220SIS Product overview: K4A50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-K4A50D can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
500V 4A MOSFET Transistor
285-K4A50D
500V 4A MOSFET Transistor 285-K4A50D
MOSFET N-CH 500V 4A TO-220SIS Product overview: K4A50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-K4A50D can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 4A TO-220SIS Product overview: K4A50D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-K4A50D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - K4A50D - 205806-K4A50D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - K4A50D
205806-K4A50D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - K4A50D 205806-K4A50D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 205806-K4A50D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 380pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 205806-K4A50D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-K4A50D 205806-K4A50D
Product Name 500V 4A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - K4A50D
Polarity N-Channel N-Channel; N-Channel
PD 30000 milliwatts 30000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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