Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 275726-HN4B101J
Category: Discrete Semiconductor Products
Family: Transistors(BJT) - Arrays
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) Product overview: HN4B101J from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-HN4B101J can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors |
| Product Number | 275726-HN4B101J | 277-HN4B101J |
| Product Name | Discrete Semiconductor Products | Bipolar Transistor |
| Package Type | SOT3 |
