Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - HN3C10FUTE85LF HN3C10FUTE85LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1043899-HN3C10FUTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 11.5dB
Frequency - Transition: 7GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: US6
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 80 @ 20mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

RF TRANS 2 NPN 12V 7GHZ US6 Product overview: HN3C10FUTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 7GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-HN3C10FUTE85LF can be used for catalog matching and distributor lookup.