Toshiba Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4017 2SK4017

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075650-2SK4017 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD2 Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 730pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075650-2SK4017 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD2 Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 730pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4017 - 075650-2SK4017 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4017
075650-2SK4017
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4017 075650-2SK4017
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075650-2SK4017 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD2 Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 730pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075650-2SK4017
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD2
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 730pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075650-2SK4017
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4017
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 20000 milliwatts
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