Toshiba Corporation MOSFET 2SK3845(Q)

Description
MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm
Description
MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SK3845 is an N-channel MOSFET designed for switching regulator, DC-DC converter, and motor drive applications. It is packaged in a TO-220 case and weighs 4.6 g. The device has a drain-source voltage rating of 60 V and a continuous drain current of 70 A. Its typical drain-source ON resistance is 4.7 mΩ at VGS = 10 V and ID = 35 A. The gate threshold voltage ranges from 2.0 to 4.0 V. The thermal resistance from channel to case is 1.0 °C/W. The single pulse avalanche energy is 328 mJ, and the repetitive avalanche energy is 12.5 mJ. The part is ESD-sensitive and available in RoHS-compatible variants.

Datasheet Summary
Powered by GS/AI

The 2SK3845 is an N-channel MOSFET designed for switching regulator, DC-DC converter, and motor drive applications. It is packaged in a TO-220 case and weighs 4.6 g. The device has a drain-source voltage rating of 60 V and a continuous drain current of 70 A. Its typical drain-source ON resistance is 4.7 mΩ at VGS = 10 V and ID = 35 A. The gate threshold voltage ranges from 2.0 to 4.0 V. The thermal resistance from channel to case is 1.0 °C/W. The single pulse avalanche energy is 328 mJ, and the repetitive avalanche energy is 12.5 mJ. The part is ESD-sensitive and available in RoHS-compatible variants.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm

MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3845(Q)
Product Name MOSFET
Unlock Full Specs
to access all available technical data