Toshiba Corporation Mosfet, N, 900V, To-220Sis; Channel Type Toshiba 2SK3799

Description
MOSFET, N, 900V, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes
  • Mosfet, N, 900V, To-220Sis; Channel Type Toshiba - 25M1426 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
MOSFET, N, 900V, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes

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Mosfet, N, 900V, To-220Sis; Channel Type Toshiba - 25M1426 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, 900V, To-220Sis; Channel Type Toshiba
25M1426
Mosfet, N, 900V, To-220Sis; Channel Type Toshiba 25M1426
MOSFET, N, 900V, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N, 900V, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 25M1426
Product Name Mosfet, N, 900V, To-220Sis; Channel Type Toshiba
IDSS 8000 milliamps
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