Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662 2SK3662

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075634-2SK3662
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Family Name: 2SK3662
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 35A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 5120pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): FS50KMJ-06F; FS50KMJ-06F-A8; FKV660; IRFIZ48V;
Introduction Date: January 15, 2003
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 35A TO220NIS / Trans MOSFET N-CH Si 60V 35A 3-Pin(3+Tab) TO-220NIS Product overview: 2SK3662 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 35A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3662 can be used for catalog matching and distributor lookup.