Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662 2SK3662

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075634-2SK3662 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: 2SK3662 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 35A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 5120pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FS50KMJ-06F; FS50KMJ-06F-A8; FKV660; IRFIZ48V; Introduction Date: January 15, 2003 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075634-2SK3662 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: 2SK3662 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 35A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 5120pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FS50KMJ-06F; FS50KMJ-06F-A8; FKV660; IRFIZ48V; Introduction Date: January 15, 2003 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662 - 075634-2SK3662 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662
075634-2SK3662
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662 075634-2SK3662
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075634-2SK3662 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: 2SK3662 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 35A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 5120pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.5 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FS50KMJ-06F; FS50KMJ-06F-A8; FKV660; IRFIZ48V; Introduction Date: January 15, 2003 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075634-2SK3662
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Family Name: 2SK3662
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 35A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 5120pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): FS50KMJ-06F; FS50KMJ-06F-A8; FKV660; IRFIZ48V;
Introduction Date: January 15, 2003
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075634-2SK3662
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3662
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 35000 milliwatts
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