Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037783-2SK3567(Q)
Packaging: Bulk
Current Rating: 3.5 A
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 600 V
Number of Elements: 1
Input Capacitance: 550 pF
Power Dissipation: 35 W
Rise Time: 38 ns
Fall Time: 25 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): STP4NK60ZFP; STF4N62K3; FQPF5N60C; FDPF5N60NZ; FQPF5N60CYDTU; FQPF4N60;
Popularity: Low
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 600 V
Element Configuration: Single
Max Power Dissipation: 35 W
Continuous Drain Current (ID): 3.5 A
Drain to Source Breakdown Voltage: 600 V
Turn-Off Delay Time: 32 ns
Drain to Source Resistance: 2.2 Ω
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 2.2 Ω
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1037783-2SK3567(Q) |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3567(Q) |
| V(BR)DSS | 600 volts |
| rDS(on) | 2.2 ohms |
| PD | 35000 milliwatts |
