Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3462 2SK3462

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075622-2SK3462 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 267pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075622-2SK3462 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 267pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3462 - 075622-2SK3462 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3462
075622-2SK3462
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3462 075622-2SK3462
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075622-2SK3462 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 267pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075622-2SK3462
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 267pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075622-2SK3462
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3462
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 20000 milliwatts
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