Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3309(TE24L,Q) 2SK3309(TE24L,Q)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1004725-2SK3309(TE24L,Q)
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SM
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 920pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

MOSFET N-CH 450V 10A TO220SM Product overview: 2SK3309(TE24L,Q) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 450V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK3309(TE24L,Q) can be used for catalog matching and distributor lookup.

N-Channel 450V 10A (Ta) 65W (Tc) Surface Mount TO-220SM