Toshiba Corporation MOSFET 2SK3017(F)

Description
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
Description
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
Datasheet
Datasheet Summary
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The 2SK3017 is an N-channel MOSFET designed for DC-DC converter, relay drive, and motor drive applications. It features a drain-source voltage rating of 900 V, a continuous drain current of 8.5 A, and a drain-source ON resistance of 1.25 Ω maximum at VGS = 10 V and ID = 4 A. The device has a gate threshold voltage ranging from 2.0 to 4.0 V and a power dissipation limit of 90 W at Tc = 25°C. It is packaged in a TO-220 style with a weight of 5.8 g and meets RoHS compatibility as indicated by the underlined marking. Thermal resistance from channel to case is 1.39 °C/W. The part is ESD-sensitive and is not intended for use in safety-critical systems such as automotive, medical, or aerospace applications.

Datasheet Summary
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The 2SK3017 is an N-channel MOSFET designed for DC-DC converter, relay drive, and motor drive applications. It features a drain-source voltage rating of 900 V, a continuous drain current of 8.5 A, and a drain-source ON resistance of 1.25 Ω maximum at VGS = 10 V and ID = 4 A. The device has a gate threshold voltage ranging from 2.0 to 4.0 V and a power dissipation limit of 90 W at Tc = 25°C. It is packaged in a TO-220 style with a weight of 5.8 g and meets RoHS compatibility as indicated by the underlined marking. Thermal resistance from channel to case is 1.39 °C/W. The part is ESD-sensitive and is not intended for use in safety-critical systems such as automotive, medical, or aerospace applications.

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Sheung Wan, Hong Kong
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3017(F)
Product Name MOSFET
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