Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2866 2SK2866

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075605-2SK2866
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2040pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): STP10NK60Z; 2SK2866(F); NDP10N62ZG;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 10A TO-220AB Product overview: 2SK2866 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2866 can be used for catalog matching and distributor lookup.