The 2SK2847 is a silicon N-channel MOSFET for DC-DC converter and motor drive applications, housed in a TO-3PN package weighing 5.8 g. It has a drain-source voltage rating of 900 V, a continuous drain current of 8 A, and a pulsed drain current of 24 A. The device exhibits a typical drain-source ON resistance of 1.1 Ω at VGS = 10 V and ID = 4 A, with a gate threshold voltage range of 2.0 to 4.0 V. Thermal resistance from channel to case is 1.47 °C/W, and channel temperature is limited to 150 °C. The transistor is electrostatic-sensit
MOSFET N-CH 900V 8A TO-3PN Product overview: 2SK2847 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2847 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-2SK2847 |
| Product Name | 900V 8A MOSFET Transistor |
| Polarity | N-Channel |
