Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2719 2SK2719

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197593-2SK2719
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(N)
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 750pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

MOSFET N-CH 900V 3A TO-3PN Product overview: 2SK2719 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2719 can be used for catalog matching and distributor lookup.