Toshiba America Electronic Components, Inc. 30V 0.2A MOSFET Transistor 2SK2009

Description
MOSFET N-CH 30V 0.2A SMINI Product overview: 2SK2009 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2009 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 30V 0.2A SMINI Product overview: 2SK2009 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2009 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
30V 0.2A MOSFET Transistor
285-2SK2009
30V 0.2A MOSFET Transistor 285-2SK2009
MOSFET N-CH 30V 0.2A SMINI Product overview: 2SK2009 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2009 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 0.2A SMINI Product overview: 2SK2009 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2009 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2009 - 159246-2SK2009 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2009
159246-2SK2009
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2009 159246-2SK2009
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 159246-2SK2009 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SC-59-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 100μA Max Input Capacitance: 70pF @ 3V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 50MA, 2.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 159246-2SK2009
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Input Capacitance: 70pF @ 3V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50MA, 2.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-2SK2009 159246-2SK2009
Product Name 30V 0.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2009
Polarity N-Channel N-Channel; N-Channel
PD 200 milliwatts 200 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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