Product overview: 2SK1117 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK1117 can be used for catalog matching and distributor lookup.
SILICON N-CHANNEL MOSFET, DRAIN SOURCE VOLTAGE: 600 V, DRAIN GATE VOLTAGE: 600 V, GATE SOURCE VOLTAGE: 20 V, DRAIN POWER DISSIPATION: 100 W, OPERATING TEMPERATURE: -55 TO 150 °C. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Radwell International | |
|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors |
| Product Number | 288-2SK1117 | 47685132 |
| Product Name | Bipolar Transistor | Transistor |
