Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ610 2SJ610

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075575-2SJ610
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 20W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 381pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.55 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 250V 2A PW-MOLD Product overview: 2SJ610 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ610 can be used for catalog matching and distributor lookup.