Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ377 2SJ377

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158599-2SJ377 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Family Name: 2SJ377 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): 2SJ279(S); MTD2955VT4G; MTD2955V; Introduction Date: January 12, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2019 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158599-2SJ377 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Family Name: 2SJ377 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): 2SJ279(S); MTD2955VT4G; MTD2955V; Introduction Date: January 12, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2019 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ377 - 158599-2SJ377 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ377
158599-2SJ377
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ377 158599-2SJ377
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158599-2SJ377 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Family Name: 2SJ377 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): 2SJ279(S); MTD2955VT4G; MTD2955V; Introduction Date: January 12, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2019 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 158599-2SJ377
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 20W (Tc)
Family Name: 2SJ377
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 630pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): 2SJ279(S); MTD2955VT4G; MTD2955V;
Introduction Date: January 12, 1998
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
60V 5A MOSFET Transistor
278-2SJ377
60V 5A MOSFET Transistor 278-2SJ377
Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold Product overview: 2SJ377 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ377 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold Product overview: 2SJ377 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ377 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 32478365 - Radwell International
Willingboro, NJ, United States
Transistor
32478365
Transistor 32478365
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SC-64 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SC-64 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 158599-2SJ377 278-2SJ377 32478365
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ377 60V 5A MOSFET Transistor Transistor
Polarity P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 20000 milliwatts 20000 milliwatts
TJ 150 C (302 F) -55 C (-67 F)
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