Toshiba Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304 2SJ304

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075570-2SJ304 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304 - 075570-2SJ304 - Win Source Electronics
    Win Source Electronics
  • TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power - 4669-2SJ304 - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075570-2SJ304 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304 - 075570-2SJ304 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304
075570-2SJ304
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304 075570-2SJ304
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075570-2SJ304 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075570-2SJ304
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 14A MOSFET Transistor
285-2SJ304
60V 14A MOSFET Transistor 285-2SJ304
MOSFET P-CH 60V 14A TO220NIS Product overview: 2SJ304 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 14A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ304 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 14A TO220NIS Product overview: 2SJ304 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 14A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ304 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power - 4669-2SJ304 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power
4669-2SJ304
TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power 4669-2SJ304
TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075570-2SJ304 285-2SJ304 4669-2SJ304
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ304 60V 14A MOSFET Transistor TRANSISTOR 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 60 volts
PD 40000 milliwatts 40000 milliwatts
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