MOSFET P-CH 60V 0.2A S-MINI Product overview: 2SJ168 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SJ168 can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 158424-2SJ168
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 200mW (Ta)
Family Name: 2SJ168
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Ta)
Max Input Capacitance: 85pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 10V
Alternative Parts (Cross-Reference): 2SJ285; BSH201; BSH201,215;
Introduction Date: March 25, 1998
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-2SJ168 | 158424-2SJ168 |
| Product Name | 60V 0.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ168 |
| Polarity | P-Channel | P-Channel; P-Channel |
| PD | 200 milliwatts | 200 milliwatts |
| TJ | 150 C (302 F) | 150 C (302 F) |