The 2SD2525 is a silicon NPN triple diffused bipolar transistor designed for audio frequency power amplifier applications. It comes in a through-hole package with a weight of 1.5 g (typical). The device has a collector-emitter voltage rating of 60 V, a continuous collector current of 3 A, and a collector power dissipation of 1.8 W. It features a minimum DC current gain of 100 at 0.5 A and a low collector-emitter saturation voltage of 0.4 V (typical) at 2 A collector current and 0.2 A base current. The transition frequency is 3 MHz, and the junction temperature range is from -55 to 150 °C. It is complementary to the 2SB1640 PNP transistor. The part is marked with a lead-free indicator and is intended for general electronics applications.
TOSHIBA TRANSTOR SILICON NPN TRIPLE DIFFUSED TYPE Product overview: 2SD2525 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2525 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SD2525 |
| Product Name | Bipolar Transistor |
