Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SD2406-Y 2SD2406-Y

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197572-2SD2406-Y
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 8MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.5V @ 300mA, 3A
Collector Cut-off Current(Max): 30μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 5V
Maximum Power Dissipation: 25W
Alternative Parts (Cross-Reference): 2SC3852A; 2SD2406-Y(F); 2SD2406-Y; 2SC5476-E;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

TRANS NPN 80V 4A TO220NIS Product overview: 2SD2406-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2406-Y can be used for catalog matching and distributor lookup.