Toshiba America Electronic Components, Inc. 80V 4A Bipolar Transistor 2SD2406-Y

Description
TRANS NPN 80V 4A TO220NIS Product overview: 2SD2406-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2406-Y can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 80V 4A TO220NIS Product overview: 2SD2406-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2406-Y can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
80V 4A Bipolar Transistor
276-2SD2406-Y
80V 4A Bipolar Transistor 276-2SD2406-Y
TRANS NPN 80V 4A TO220NIS Product overview: 2SD2406-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2406-Y can be used for catalog matching and distributor lookup.

TRANS NPN 80V 4A TO220NIS Product overview: 2SD2406-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2406-Y can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2406-Y - 197572-2SD2406-Y - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2406-Y
197572-2SD2406-Y
TRANSISTORS - Transistors (BJT) - Single - 2SD2406-Y 197572-2SD2406-Y
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 197572-2SD2406-Y Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 8MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1.5V @ 300mA, 3A Collector Cut-off Current(Max): 30μA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 5V Maximum Power Dissipation: 25W Alternative Parts (Cross-Reference): 2SC3852A; 2SD2406-Y(F); 2SD2406-Y; 2SC5476-E; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197572-2SD2406-Y
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 8MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.5V @ 300mA, 3A
Collector Cut-off Current(Max): 30μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 5V
Maximum Power Dissipation: 25W
Alternative Parts (Cross-Reference): 2SC3852A; 2SD2406-Y(F); 2SD2406-Y; 2SC5476-E;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SD2406-Y 197572-2SD2406-Y
Product Name 80V 4A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SD2406-Y
Polarity NPN NPN; NPN
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