Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SD2257,Q 2SD2257,Q

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 158115-2SD2257,Q
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 1.5mA, 1.5A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 2A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

TRANS NPN 3A 100V TO220-3 Product overview: 2SD2257,Q from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2257,Q can be used for catalog matching and distributor lookup.