Toshiba America Electronic Components, Inc. 3A 100V TO220 Bipolar Transistor 2SD2257,Q

Description
TRANS NPN 3A 100V TO220-3 Product overview: 2SD2257,Q from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2257,Q can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 3A 100V TO220-3 Product overview: 2SD2257,Q from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2257,Q can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore, Singapore
3A 100V TO220 Bipolar Transistor
276-2SD2257,Q
3A 100V TO220 Bipolar Transistor 276-2SD2257,Q
TRANS NPN 3A 100V TO220-3 Product overview: 2SD2257,Q from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2257,Q can be used for catalog matching and distributor lookup.

TRANS NPN 3A 100V TO220-3 Product overview: 2SD2257,Q from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2257,Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2257,Q - 158115-2SD2257,Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2257,Q
158115-2SD2257,Q
TRANSISTORS - Transistors (BJT) - Single - 2SD2257,Q 158115-2SD2257,Q
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158115-2SD2257,Q Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 1.5mA, 1.5A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 2A, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 158115-2SD2257,Q
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 1.5mA, 1.5A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 2A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SD2257,Q 158115-2SD2257,Q
Product Name 3A 100V TO220 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SD2257,Q
Polarity NPN NPN; NPN
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