Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SD2129 2SD2129

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158039-2SD2129 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 12mA, 3A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 1.5A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158039-2SD2129 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 12mA, 3A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 1.5A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - 2SD2129 - 158039-2SD2129 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2129
158039-2SD2129
TRANSISTORS - Transistors (BJT) - Single - 2SD2129 158039-2SD2129
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 158039-2SD2129 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 12mA, 3A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 1.5A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 158039-2SD2129
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2V @ 12mA, 3A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 1.5A, 3V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 158039-2SD2129
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD2129
Polarity NPN; NPN
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