Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SD2012FM 2SD2012FM

Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037404-2SD2012FM Packaging: Bulk Mounting: SMD (SMT) Polarity: NPN Number of Pins: 3 Categories: RF Transistors(BJT) Case / Package: TO-220-3 Alternative Parts (Cross-Reference): 2SD2012FM2SD2012(F,M ); Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Mount: Through Hole RoHS: Compliant Radiation Hardening: No Max Power Dissipation: 2 W Collector Base Voltage (VCBO): 60 V Collector Emitter Breakdown Voltage: 60 V Collector Emitter Voltage (VCEO): 1 V Max Collector Current: 3 A Transition Frequency: 3 MHz