Toshiba America Electronic Components, Inc. 60V 3A Bipolar Transistor 2SD2012FM

Transistor NPN 60V 3A TO220NIS Product overview: 2SD2012FM from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SD2012FM can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037404-2SD2012FM
Packaging: Bulk
Mounting: SMD (SMT)
Polarity: NPN
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: TO-220-3
Alternative Parts (Cross-Reference): 2SD2012FM2SD2012(F,M);
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Shortage
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Max Power Dissipation: 2 W
Collector Base Voltage (VCBO): 60 V
Collector Emitter Breakdown Voltage: 60 V
Collector Emitter Voltage (VCEO): 1 V
Max Collector Current: 3 A
Transition Frequency: 3 MHz