Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SD2012(F) 2SD2012(F)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037403-2SD2012(F)
Number of Pins: 3
Categories: RF Transistors(BJT)
Alternative Parts (Cross-Reference): KSC5027OTU; KSC5603DTU; MJE172STU; ZTX1053A; ZTX689BSTZ; ZTX1149A2SD2012F;
Popularity: Low
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Max Power Dissipation: 2 W
Collector Base Voltage (VCBO): 60 V
Collector Emitter Voltage (VCEO): 60 V
Max Collector Current: 3 A

Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS Product overview: 2SD2012(F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SD2012(F) can be used for catalog matching and distributor lookup.