Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SD1407 2SD1407

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075545-2SD1407 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 12MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 400mA, 4A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 120 @ 1A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075545-2SD1407 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 12MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 400mA, 4A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 120 @ 1A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Single - 2SD1407 - 075545-2SD1407 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1407
075545-2SD1407
TRANSISTORS - Transistors (BJT) - Single - 2SD1407 075545-2SD1407
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075545-2SD1407 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 12MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 400mA, 4A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 120 @ 1A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075545-2SD1407
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 12MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2V @ 400mA, 4A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1A, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 075545-2SD1407
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD1407
Polarity NPN; NPN
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