Toshiba America Electronic Components, Inc. 100V 5A Bipolar Transistor 2SD1407

Description
TRANS NPN 100V 5A TO220NIS Product overview: 2SD1407 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1407 can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 100V 5A TO220NIS Product overview: 2SD1407 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1407 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 5A Bipolar Transistor
276-2SD1407
100V 5A Bipolar Transistor 276-2SD1407
TRANS NPN 100V 5A TO220NIS Product overview: 2SD1407 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1407 can be used for catalog matching and distributor lookup.

TRANS NPN 100V 5A TO220NIS Product overview: 2SD1407 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1407 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1407 - 075545-2SD1407 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1407
075545-2SD1407
TRANSISTORS - Transistors (BJT) - Single - 2SD1407 075545-2SD1407
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075545-2SD1407 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 12MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2V @ 400mA, 4A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 120 @ 1A, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075545-2SD1407
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 12MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2V @ 400mA, 4A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1A, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SD1407 075545-2SD1407
Product Name 100V 5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SD1407
Polarity NPN NPN; NPN
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