Toshiba America Electronic Components, Inc. 60V 3A Bipolar Transistor 2SD1221-GR

Description
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold Product overview: 2SD1221-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1221-GR can be used for catalog matching and distributor lookup.
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Description
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold Product overview: 2SD1221-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1221-GR can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
60V 3A Bipolar Transistor
276-2SD1221-GR
60V 3A Bipolar Transistor 276-2SD1221-GR
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold Product overview: 2SD1221-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1221-GR can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold Product overview: 2SD1221-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1221-GR can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - 157592-2SD1221-GR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
157592-2SD1221-GR
Discrete Semiconductor Products 157592-2SD1221-GR
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157592-2SD1221-GR Category: Discrete Semiconductor Products Family: Transistors(BJT) - Single Family Name: 2SD1221-GR Alternative Parts (Cross-Reference): 2SD1221-GR(TE16L); MJD360T4-A; STD1802-1; STD1802; Introduction Date: February 19, 1997 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: Obsolete / End of life Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157592-2SD1221-GR
Category: Discrete Semiconductor Products
Family: Transistors(BJT) - Single
Family Name: 2SD1221-GR
Alternative Parts (Cross-Reference): 2SD1221-GR(TE16L); MJD360T4-A; STD1802-1; STD1802;
Introduction Date: February 19, 1997
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: Obsolete / End of life
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-2SD1221-GR 157592-2SD1221-GR
Product Name 60V 3A Bipolar Transistor Discrete Semiconductor Products
Package Type SOT3
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