The 2SC6061 is a silicon NPN epitaxial transistor designed for high-speed switching and DC-DC converter applications. It is packaged in a TO-92 package with dimensions of 2.0 mm in diameter and 5.9 mm in height. Maximum ratings include a collector-emitter voltage of 120 V, a collector current of 1.0 A (DC) and 2.0 A (pulse), and a collector power dissipation of 625 mW at 25°C. The transistor features a DC current gain (hFE) of 120 to 300 at IC = 0.1 A, a collector-emitter saturation voltage of 0.14 V max at IC = 0.3 A and IB = 0.01 A, and a fall time of 0.2 μs typ. The device operates with a junction temperature up to 150°C and storage temperatures from -55°C to 150°C. It meets the TOSHIBA 2-3S1C marking standard and is suitable for use under derated conditions as specified in the reliability handbook.
Silicon NPN Epitaxial Type Product overview: 2SC6061 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6061 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SC6061 |
| Product Name | Bipolar Transistor |
