Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFVGR,L3F 2SC6026MFVGR,L3F

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 096889-2SC6026MFVGR,L3F
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: NPN
Family Name: 2SC6026MFVGR
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VESM
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Alternative Parts (Cross-Reference): 2SC5658-SRMG; 2SC5658-RRMG; 2SC5658-S RDG; 2SC5658Q;
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFVGR,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFVGR,L3F can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 50V 150mA 60MHz 150mW Surface Mount VESM

Bipolar (BJT) Transistor NPN 50V 150mA 60MHz 150mW Surface Mount VESM

Bipolar (BJT) Transistor NPN 50V 150mA 60MHz 150mW Surface Mount VESM