Toshiba Corporation 50V 0.15A Bipolar Transistor 2SC6026MFV

Description
TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFV can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFV can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
50V 0.15A Bipolar Transistor
276-2SC6026MFV
50V 0.15A Bipolar Transistor 276-2SC6026MFV
TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFV can be used for catalog matching and distributor lookup.

TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFV can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFV - 157396-2SC6026MFV - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFV
157396-2SC6026MFV
TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFV 157396-2SC6026MFV
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157396-2SC6026MFV Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 60MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VESM Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157396-2SC6026MFV
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VESM
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SC6026MFV 157396-2SC6026MFV
Product Name 50V 0.15A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFV
Polarity NPN NPN; NPN
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