Toshiba Corporation TRANSISTORS - Transistors (BJT) - Single - 2SC6026MFV 2SC6026MFV

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157396-2SC6026MFV
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VESM
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

TRANS NPN 50V 0.15A VESM Product overview: 2SC6026MFV from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC6026MFV can be used for catalog matching and distributor lookup.