Toshiba Corporation Bipolar Transistors - BJT 2SC6026MFV-GR(TPL3

The 2SC6026MFV is a silicon NPN epitaxial transistor for general-purpose amplifier applications, packaged in a surface-mount case with dimensions of 2.1 mm × 1.2 mm × 0.8 mm and a weight of 1.5 mg. It has a collector-emitter voltage rating of 50 V, a collector current rating of 150 mA, and a collector power dissipation of 150 mW when mounted on an FR4 board. The device features a DC current gain (hFE) of 200 to 400 for the GR classification, with excellent hFE linearity and a transition frequency of 60 MHz. It meets the JEDEC and JEITA package standards and is marked with the GR hFE classification. The part is not intended for use in applications requiring extraordinarily high reliability, such as medical, automotive, or nuclear systems.