Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SC5930 2SC5930

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157368-2SC5930 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: MSTM Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1V @ 75mA, 600mA Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157368-2SC5930 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: MSTM Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1V @ 75mA, 600mA Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors (BJT) - Single - 2SC5930 - 157368-2SC5930 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5930
157368-2SC5930
TRANSISTORS - Transistors (BJT) - Single - 2SC5930 157368-2SC5930
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157368-2SC5930 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: MSTM Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1V @ 75mA, 600mA Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157368-2SC5930
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: MSTM
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 1V @ 75mA, 600mA
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 40 @ 200mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 157368-2SC5930
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC5930
Polarity NPN; NPN
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