Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SC5930 2SC5930

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157368-2SC5930
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: MSTM
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 1V @ 75mA, 600mA
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 40 @ 200mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

TRANS NPN 1A 600V SC71 Product overview: 2SC5930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 600V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5930 can be used for catalog matching and distributor lookup.