Toshiba America Electronic Components, Inc. 1A 600V Bipolar Transistor 2SC5930

Description
TRANS NPN 1A 600V SC71 Product overview: 2SC5930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 600V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5930 can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 1A 600V SC71 Product overview: 2SC5930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 600V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5930 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
1A 600V Bipolar Transistor
276-2SC5930
1A 600V Bipolar Transistor 276-2SC5930
TRANS NPN 1A 600V SC71 Product overview: 2SC5930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 600V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5930 can be used for catalog matching and distributor lookup.

TRANS NPN 1A 600V SC71 Product overview: 2SC5930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 600V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5930 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC5930 - 157368-2SC5930 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5930
157368-2SC5930
TRANSISTORS - Transistors (BJT) - Single - 2SC5930 157368-2SC5930
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 157368-2SC5930 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: MSTM Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1V @ 75mA, 600mA Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157368-2SC5930
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: MSTM
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 1V @ 75mA, 600mA
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 40 @ 200mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SC5930 157368-2SC5930
Product Name 1A 600V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SC5930
Polarity NPN NPN; NPN
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