The 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications such as DC-DC converters and strobe circuits. It is packaged in a JEITA SC-62 case with a weight of 0.05 g. The device has a collector-emitter voltage rating of 50 V, a collector current rating of 1.0 A, and a collector power dissipation of 2.0 W when mounted on an FR4 board. It features a high DC current gain of 400 to 1000 at IC = 0.1 A and a low collector-emitter saturation voltage of 0.17 V maximum at IC = 300 mA and IB = 6 mA. Switching performance includes a typical fall time of 85 ns. The junction temperature ranges from -55 °C to 150 °C. The part is not intended for use in applications requiring extraordinarily high reliability, such as medical, automotive, or aerospace systems.
Product overview: 2SC5810 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5810 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SC5810 |
| Product Name | Bipolar Transistor |
